2SK3130 2009-09-29 1 toshiba field effect transistor silicon n channel mos type ( -mos v ) 2SK3130 switching regulator applications ? reverse-reco very time: t rr = 85 ns ? built-in high-speed flywheel diode ? low drain-source on resistance: r ds (on) = 1.12 ? (typ.) ? high forward transfer admittance: |y fs | = 5.0 s (typ.) ? low leakage current: i dss = 100 a (max) (v ds = 600 v) ? enhancement model: v th = 2.0 to 4.0 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 600 v drain-gate voltage (r gs = 20 k ) v dgr 600 v gate-source voltage v gss 30 v dc (note 1) i d 6 drain current pulse (note 1) i dp 24 a drain power dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 345 mj avalanche current i ar 6 a repetitive avalanche energy (note 3) e ar 4 mj channel temperature t ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heavy loads (e.g . the application of high temperature/cu rrent/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliabilit y handbook (?handling precaut ions?/?derating concept and methods?) and individual reliability data (i.e. reliabilit y test report and estimated failure rate, etc). thermal characteristics characteristics symbol max unit thermal resistance, channel to case r th (ch-c) 3.125 c/w thermal resistance, channel to ambient r th (ch-a) 62.5 c/w note 1: ensure that the channel temperature does not exceed 150c. note 2: v dd = 90 v, t ch = 25c (initial), l = 16.8 mh, r g = 25 , i ar = 6 a note 3: repetitive rating: pulse width limit ed by maximum channel temperature. this transistor is an electrostatic-sens itive device. please handle with caution unit: mm jedec D jeita sc-67 toshiba 2-10r1b weight: 1.9 g (typ.)
2SK3130 2009-09-29 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 a gate-source breakdown voltage v (br) gss i g = 100 a, v ds = 0 v 30 ? ? v drain cut-off current i dss v ds = 600 v, v gs = 0 v ? ? 100 a drain-source breakdown voltage v (br) dss i d = 10 ma, v gs = 0 v 600 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain-source on resistance r ds (on) v gs = 10 v, i d = 3 a ? 1.12 1.55 forward transfer admittance ? y fs ? v ds = 10 v, i d = 3 a 1.5 5.0 ? s input capacitance c iss ? 1300 ? reverse transfer capacitance c rss ? 130 ? output capacitance c oss v ds = 10 v, v gs = 0 v, f = 1 mhz ? 400 ? pf rise time t r ? 25 ? turn-on time t on ? 45 ? fall time t f ? 40 ? switching time turn-off time t off ? 150 ? ns total gate charge (gate-source plus gate-drain) q g ? 30 ? gate-source charge q gs ? 18 ? gate-drain (?miller?) charge q gd v dd ? 400 v, v gs = 10 v, i d = 6 a ? 12 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 6 a pulse drain reverse current (note 1) i drp ? ? ? 24 a forward voltage (diode) v dsf i dr = 6 a, v gs = 0 v ? ? ? 1.7 v reverse recovery time t rr ? 85 ? ns reverse recovery charge q rr i dr = 6 a, v gs = 0 v, di dr /dt = 100 a/ s ? 0.21 ? c marking note 4: a line under a lot no. i dentifies the indication of product labels. not underlined: [[pb]]/includes > mcv underlined: [[g]]/rohs compatible or [[g]]/rohs [[pb]] please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of product. the rohs is the directive 2002/ 95/ec of the european parliament and of the council of 27 january 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. lot no. note 4 k3130 part no. (or abbreviation code) duty < = 1%, t w = 10 s 0 v 10 v v gs r l = 100 v dd ? 300 v i d = 3 a v out 50
2SK3130 2009-09-29 3 drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain-source voltage v ds (v) drain current i d (a) |y fs | ? i d forward transfer admittance |y fs | (s) drain current i d (a) r ds (on) ? i d drain-source on resistance r ds (on) ( ) 0 v gs = 5.0 v 15 0 2 4 6 8 10 1 2 3 4 5 common source tc = 25c pulse test 10 6 5.8 5.6 5.4 5.2 0 v gs = 5.0 v 0 10 20 30 40 50 2 4 6 8 10 15 common source tc = 25c pulse test 10 6.4 6.2 6.0 5.8 5.4 0 0 2 4 6 8 10 2 4 6 8 10 common source v ds = 20 v pulse test 100 tc = 25c 0.1 0.1 1 100 1 100 10 10 common source v ds = 20 v pulse test tc = 25c 100 1 0.1 1 10 10 100 v gs = 10, 15 v common source tc = 25c pulse test 16 0 4 8 12 20 1.5 3 048 16 12 20 common source tc = 25c pulse test i d = 6 a
2SK3130 2009-09-29 4 case temperature tc (c) r ds (on) ? tc drain-source on resistance r ds (on) ( ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) case temperature tc (c) v th ? tc gate threshold voltage v th (v) case temperature tc (c) p d ? tc drain power dissipation p d (w) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 3 0 0 40 120 160 80 1 2 5 4 i d = 6 a 3 common source v gs = 10 v pulse test 1.5 0.1 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1.0 ? 1.2 10 1 common source tc = 25c pulse test v gs = 0, ? 1 v 10 5 3 0.1 1 10 100 10 100 1000 0.3 0.5 3 5 30 50 30 50 300 500 3000 common source v gs = 0 v f = 1 mhz tc = 25c c iss c oss c rss 0 1 2 3 5 ? 80 ? 40 0 40 80 120 160 4 common source v ds = 10 v i d = 1 ma pulse test 0 0 40 80 120 160 200 10 20 30 40 50 0 0 10 40 50 20 4 8 12 16 20 0 100 200 300 400 500 30 common source i d = 6 a tc = 25c pulse test v dd = 100 v 200 400 v ds v gs
2SK3130 2009-09-29 5 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch-c) drain-source voltage v ds (v) safe operating area drain current i d (a) channel temperature (initial) t ch (c) e as ? t ch avalanche energy e as (mj) 0.001 10 100 1 m 0.01 0.1 1 10 0.01 0.1 1 10 t p dm t duty = t/t r th (ch-c) = 3.125c/w duty = 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 1 0.1 1 10 10 100 1000 100 * single nonrepetitive pulse tc = 25c curves must be derated linearly with increase in temperature. i d max (pulsed) * i d max ( continuous ) dc operation tc = 25c 100 s * 1 ms * v dss max 0 25 50 75 100 150 125 100 200 300 400 500 ?15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 v dd = 90 v, l = 16.8 mh ? ? ? ? ? ? ? ? ? ???= dd v vdss b vdss b 2 il 2 1 as e
2SK3130 2009-09-29 6 restrictions on product use ? toshiba corporation, and its subsidiaries and affiliates (collect ively ?toshiba?), reserve the right to make changes to the in formation in this document, and related hardware, software a nd systems (collectively ?product?) without notice. ? this document and any information herein may not be reproduc ed without prior written permission from toshiba. even with toshiba?s written permission, reproduc tion is permissible only if reproducti on is without alteration/omission. ? though toshiba works continually to improve product?s quality and reliability, product can malfunction or fail. customers are responsible for complying with safety standards and for prov iding adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a ma lfunction or failure of product could cause loss of human life, b odily injury or damage to property, including data loss or corruption. before creating and producing des igns and using, customers mus t also refer to and comply with (a) the latest versions of all re levant toshiba information, including without limitation, this d ocument, the specifications, the data sheets and applic ation notes for product and the precautions and conditions set forth in the ?tosh iba semiconductor reliability handbook? and (b) t he instructions for the application that product will be used with or for. custome rs are solely responsible for all aspects of t heir own product design or applications, incl uding but not limited to (a) determining th e appropriateness of the use of this product in such design or applications; (b) evaluating and det ermining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. toshiba assumes no liability for customers? product design or applications. ? product is intended for use in general el ectronics applications (e.g., computers, personal equipment, office equipment, measur ing equipment, industrial robots and home electroni cs appliances) or for specif ic applications as expre ssly stated in this document . product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality a nd/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or se rious public impact (?unintended use?). unintended use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic s ignaling equipment, equipment used to control combustions or explosions, safety dev ices, elevators and escalato rs, devices related to el ectric power, and equipment used in finance-related fields. do not use product for unintended use unless specifically permitted in thi s document. ? do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy product, whether in whole or in part. ? product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. ? the information contained herein is pres ented only as guidance for product use. no re sponsibility is assumed by toshiba for an y infringement of patents or any other intellectual property rights of third parties that may result from the use of product. no license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ? a bsent a written signed agreement, except as provid ed in the relevant terms and conditions of sale for product, and to the maximum extent allowable by law, toshiba (1) assumes no liability whatsoever, including without limitation, indirect, co nsequential, special, or incidental damages or loss, including without limitation, loss of profit s, loss of opportunities, business interruption and loss of data, and (2) disclaims any and all express or implied warranties and conditions related to sale, use of product, or information, including warranties or conditions of merchantability, fitness for a particular purpose, accuracy of information, or noninfringement. ? do not use or otherwise make available product or related so ftware or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or m anufacturing of nuclear, chemical , or biological weapons or missi le technology products (mass destruction w eapons). product and related software and technology may be controlled under the japanese foreign exchange and foreign trade law and the u.s. expor t administration regulations. ex port and re-export of product or related software or technology are strictly prohibited exc ept in compliance with all applicable export laws and regulations. ? please contact your toshiba sales representative for details as to environmental matters such as the rohs compatibility of pro duct. please use product in compliance with all applicable laws and regula tions that regulate the inclusion or use of controlled subs tances, including without limitation, the eu rohs directive. toshiba assumes no liability for damages or losses occurring as a result o f noncompliance with applicable laws and regulations.
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